e-Beam Damage on ArF Photo Resist
This slide shows e-beam damage on ArF photoresist.
The AFM topography image reveals surface modifications caused by e-beam exposure.
The PiFM image highlights compositional changes in the exposed regions, clearly distinguishing them from the unaffected areas.
Scanning Conditions
- System: AFM-IR
- Sample: Sample: PR pattern sample
- Scan Mode: PiFM (Channel: Z Height, PiFM Amplitude)
- Scan Rate: 1 Hz
- Scan Size: 1 µm × 1 µm
- Pixel Size: 512 × 256 pixels
Related Contents

Application Talks
Giant Optical Anisotropy and High Refractive Index in van der Waals Materials

System Webinars
Spectroscopic Imaging Ellipsometry at Cryogenic Temperatures Applied to Atomically Thin Crystals

Application Talks
Full control and automation on point with next-gen Atomic Force Microscopy
×