Interfacial ferroelectricity by van der Waals sliding
- Journal: Science
- Published Year: 2021
- Authors: M. Vizner Stern, Y. Waschitz, W. Cao, I. Nevo, K. Watanabe, T. Taniguchi, E. Sela, M. Urbakh, O. Hod, and M. Ben Shalom
- Application: ferroelectric devices, nanoscale electronics, quantum materials engineering
Summary
In this study, researchers report emergent interfacial ferroelectricity in parallel‑stacked bilayers of hexagonal boron nitride (h‑BN). Using elvin probe force microscopy (KPFM), the authors mapped local surface potential variations (ΔVKP ≈ 210‑230 mV) across AB/BA-stacked domains, directly visualizing out-of-plane polarization domains at the interface. Domain sizes and stacking arrangements were characterized, and AFM-tip–induced bias scans enabled reversible switching of polarization orientation. These AFM-derived insights, supported by DFT and modeling, validate a novel ‘slidetronics’ mechanism in 2D ferroelectrics
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