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In this webinar, I will show our study on the nanoscale conductivity of the TMD materials MoS2 and WS2 via conductive atomic force microscopy (C-AFM) to relate local electronic behavior to topographical features like the surface roughness or layer thickness.

 
 

Intrinsic electrical characterization of two-dimensional transition metal dichalcogenides via scanning probe microscopy

 

Wednesday, 1 December, 2021

  • 10:00 am – 11:30 am
    (GMT)
    London, Dublin
  • 11:00 am – 12:30 pm
    (CET)
    Berlin, Paris, Rome
  • 18:00pm – 19:30 pm
    [UTC+9]
    Seoul, Tokyo

 

 

Due to their low layer thickness and suitable electrical properties, 2D transition metal dichalcogenides (TMDs) are widely investigated for potential application in next generation nanoelectronics. In this webinar, I will show our study on the nanoscale conductivity of the TMD materials MoS2 and WS2 via conductive atomic force microscopy (C-AFM) to relate local electronic behavior to topographical features like the surface roughness or layer thickness. The heterogeneous current distribution resolved on the TMDs directly correlates to the sample morphology. It is suggested that the TMD nucleation on the sapphire substrate can introduce local strain or defects, which reduce the overall uniformity of the conductivity.

Presented By : 
Dr. Yuanyuan Shi, imec Belgium

Dr. Yuanyuan Shi iscurrently a Postdoctoral fellow (Fundedby Marie Curie Fellowship from European Commission) at IMEC, Belgium. Her current research is mainly about developing wafer-scale two-dimensional (2D) materials based transistor technology for scaling high-performance logic devices beyond 3nm technology node.
Dr. Shi received her Ph.D. degree in NanoScience with Excellent “Cum Laude” honor and Extraordinary PhD prize from the Universityof Barcelona in 2018. Duringher PhD, she was a visiting scholar at Stanford University for one year (2016-2017). Her PhD research work mainly focused on emerging memory devices, and its application for neuromorphic computing.
Dr. Shi has published more than 50 research articles (including Nature Electronics, IEDM, Nano Letters, Advanced Functional Materials etc.), two book chapters and granted for two international patents. She serves as an active member in IEEE EDS Nanotechnology committee and at the technical committee of several top conferences in the field of electronic devices, such as IEEE International Reliability Physics Symposium (IRPS), IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) and IEEE Electron Devices Technology and Manufacturing (EDTM). She is also an active reviewerfor Nature, Nature Electronics, IEEE Electron Device Letters, Scientific Reports and many other journals.
Dr. Shi has beenrecognized as a Forbes 30 under 30 (one of the world’s most impactful community of young entrepreneurs and game-changers) in 2020 and also as one of the Rising Stars Women in Engineering in 2018

Park Lectures - Park Atomic Force Microscope