-
H-BN Friction MolybdenumDisulfide Lateral_Force_Microscopy Dopped PS_PVAC IVSpectroscopy Mosfet Copolymer AnodizedAluminumOxide IIT-chennai Sapphire ForceVolumeImage Temperature HexagonalBoronNitride sputter PMNPT Holes single_layer CuParticle tip_bias_mode IISCBangalore TemperatureControllerStage Epoxy Oxide dichalcogenide PhthalocyaninePraseodymium CalciumHydroxide ElectroChemical OxideLayer Ananth Blend MoS2 OpticalWaveguides PolycrystallineFerroelectricBCZT
Report image
If you found this image unacceptable, please let us know. We will review your report and take action if we determine this image is really unacceptable.
Photoresist pattern (post-development process)
Scanning Conditions
- System : NX-3DM
- Scan Mode: Non-contact
- Scan Rate : 0.1 Hz
- Scan Size : 2μm×10μm
- Pixel Size : 512×2048
- Cantilever : EBD-R2-NCLR (k=45N/m, f=190kHz)