The 2019 nanoGe Fall Meeting will be held on 4 – 8 November 2019 in Berlin, Germany. Park Systems is proud to be a sponsor of this exciting event!
nanoGe Fall Meeting is a unique series of symposia focused on advanced materials preparation and fundamental properties and their applications, in fields such as renewable energy (photovoltaics, batteries), lighting, semiconductor quantum dots, 2-D materials synthesis and semiconductors fundamentals, bioimaging, etc.
Park Systems sponsors the "Mapping Nanoscale Functionality with Scanning Probe Microscopy" poster session. Join the team at our booth to talk about innovative features and application solutions for material and life science disciplines.
Come and join our technical talk "Simultaneous SKPM and Current-Voltage Characterization of Slow Charging Processes in Transistors" presented by Dr. Andrea Carreta on November, 5 at 10:00.
Abstarct
Simultaneous SKPM and Current-Voltage Characterization of Slow Charging Processes in
Transistors
Andrea Cerreta1, Florian Stumpf1, Ilka M. Hermes1, Manfred Madel2, Linh Trinh-Xuan2, Sandra
Riedmüller2, Daniel Sommer2, Hervé Blanck2
1Park Systems Europe GmbH, Janderstraße 5, 68199 Mannheim (Germany)
2United Monolithic Semiconductors GmbH, Wilhelm-Runge-Straße 11, Ulm (Germany)
Scanning Kelvin probe microscopy (SKPM) resolves surface potentials on the nanoscale, which
translate into the work function distribution of the sample as well as the distribution of additional
charge carriers upon electronic excitation.[1] For quantitative analysis, frequency modulated (FM)
SKPM methods have shown the highest accuracy. Heterodyne FM-SKPM in particular allows for fast
scanning and exhibits low topographic crosstalk.[2] A quantitative visualization of work function and
charge carrier distribution is especially of interest for the semiconductor-based industry (transistors,
solar cells, etc.) to locate bottlenecks in device performances.
In this study, we investigated dynamic charging processes on active transistor devices (InAlN/GaN
HEMT with LG = 100 nm) via a line-by-line heterodyne SKPM approach to acquire transient potential
signals with a time resolution of around one second, while simultaneously recording macroscopic
current-voltage (IV) characteristics on the same devices. During switching, some of the transistors
exhibited a slow charging over several minutes in their IV response. Via time-resolved SKPM, we
located the spatial origin of the slow charging in the gate-drain area of the transistor, where we
observed a change in surface potential transients coinciding with the macroscopic IV transients. The
observed charging could be caused by slow trapping mechanisms located either at the
semiconductor/dielectric interface or the bulk dielectric passivation (PECVD SiOx or SiNx).
[1] Melitz, W.; Shen, J.; Kummel, A. C.; Lee, S. Kelvin probe force microscopy and its application.
Surf. Sci. Rep. 2011 66, 1–27.
DOI: 10.1016/j.surfrep.2010.10.001
[2] Axt, A.; Hermes, I. M.; Bergmann, V. W.; Tausendpfund, N.; Weber, S. A. L. Know your full
potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices.
Beilstein J. Nanotechnol. 2018 9(1), 1809-1819.
DOI: 10.3762/bjnano.9.172
- Time: 4 – 8 November 2019
- Venue: Holiday Inn City West Berlin, Rohrdamm 80, Berlin 13629 Germany
- Our location: Park Systems booth